Sic-gan: a Self-improving Collaborative Gan for Decoding Variational Rnns
ثبت نشده
چکیده
Variational RNNs are proposed to output “creative” sequences. Ideally, a collection of sequences produced by a variational RNN should be of both high quality and high variety. However, existing decoders for variational RNNs suffer from a trade-off between quality and variety. In this paper, we seek to learn a variational RNN that decodes high-quality and high-variety sequences. We propose the Self-Improving Collaborative GAN (SIC-GAN), where there are two generators (variational RNNs) collaborating with each other to output a sequence and aiming to trick the discriminator into believing the sequence is of good quality. By deliberately weakening one generator, we can make another stronger in balancing quality and variety. We conduct experiments using the QuickDraw dataset and the results demonstrate the effectiveness of SIC-GAN empirically.
منابع مشابه
Non-linear modeling, analysis, design and simulation of a solid state power amplifier based on GaN technology for Ku band microwave application
A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...
متن کاملDirect growth of freestanding GaN on C-face SiC by HVPE
In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeate...
متن کاملVacancies in GaN bulk and nanowires: effect of self-interaction corrections.
We investigate gallium and nitrogen vacancies in gallium nitride (GaN) bulk and nanowires using self-interaction corrected pseudopotentials (SIC). In particular, we examine the band structures to compare and contrast differences between the SIC results and standard density functional theory (DFT) results using a generalized gradient approximation (GGA) (Perdew et al 1996 Phys. Rev. Lett. 77 386...
متن کاملComparison of thermal properties of packaged AlGaN/GaN HFETs on Si and n-SiC substrates
Purpose of the work High voltage power switching AlGaN/GaN HFETs are gaining considerable interest for future highly efficient power electronic applications. Due to its lower cost and production line compatibility, GaN-on-Silicon approaches are most attractive for industrial implementation. On the other hand, the Si substrate has a three times lower thermal conductivity as compared to the SiC s...
متن کاملCUBIC GaN HETEROEPITAXY ON THIN-SiC-COVERED Si(001)
We have investigated the growth conditions of cubic GaN (β-GaN) layers on very thin SiC-covered Si(001) by using gas-source molecular beam epitaxy as functions of SiC layer thickness, Ga-cell temperature and substrate temperature. Under the present SiC formation conditions on Si substrates by carbonization using C2H2 gas, the SiC layers with the thickness between 2.5 and 4 nm result in the epit...
متن کامل